[可怕NEWS]IBM打造500GHz超級晶片 運算速度提高250倍
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yyyfly
我要寫一個慘字>"
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恩恩..這讓我看到很美好的未來
用法很多啊
小方向可以....
一條街的人可以只使用一顆處理器...每個人只要買顯示卡記憶體硬碟螢幕等...或者是配合FTTB
以後網路跟處理器資源可以依照需求購買(租用)~
實現節省能源資源的最終用法主機終端機架構
~講實話~
大部分人尋常百姓買電腦都是拿來上網.聊天.查資料
千元電腦終端機配合高畫質電視不是夢想.
一間學校一個院只需要1~2顆處理器~也順便把全部的線路連接~透過1G的網路座負載平衡
平時可以做做公益運算~或者是找找外星人
至於大方向..
可以讓C大破PI跟3DMARK的紀錄.我想我在有生之年可能可以看到3DMARK分數破百萬...
也可讓木偶人的後製輸出方面只要花幾秒鐘...= ="
用法很多啊
小方向可以....
一條街的人可以只使用一顆處理器...每個人只要買顯示卡記憶體硬碟螢幕等...或者是配合FTTB
以後網路跟處理器資源可以依照需求購買(租用)~
實現節省能源資源的最終用法主機終端機架構
~講實話~
大部分人尋常百姓買電腦都是拿來上網.聊天.查資料
千元電腦終端機配合高畫質電視不是夢想.
一間學校一個院只需要1~2顆處理器~也順便把全部的線路連接~透過1G的網路座負載平衡
平時可以做做公益運算~或者是找找外星人
至於大方向..
可以讓C大破PI跟3DMARK的紀錄.我想我在有生之年可能可以看到3DMARK分數破百萬...
也可讓木偶人的後製輸出方面只要花幾秒鐘...= ="
jacksonx2000
高級會員
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guess2098
超級過氣會員..
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500倍of cell phone??!!
SAN JOSE, Calif. — IBM Corp. and the Georgia Institute of Technology Tuesday (June 20) claimed they have broken the silicon speed record, thanks in part to a "frozen chip."
IBM (Armonk, N.Y.) and Georgia Tech (Atlanta) claimed that they have demonstrated the first silicon-based chip capable of operating at frequencies above 500 GHz by cryogenically "freezing" the circuit to minus 451 degrees Fahrenheit (4.5 Kelvins).
By comparison, 500 GHz is more than 250 times faster than today's cell phones, which typically operate at approximately 2 GHz, according to the organizations.
The experiments, conducted jointly by IBM and Georgia Tech, are part of a project to explore the ultimate speed limits of silicon germanium (SiGe) devices, which are said to operate faster at cold temperatures.
Ultrahigh-frequency SiGe circuits have potential applications in commercial communications systems, military electronics, space and remote sensing. The research could make possible a new class of powerful, low-energy chips that will deliver future applications like HDTV and movie-quality video to cellphones, automobiles and other devices.
The chips used in the research are from a prototype fourth-generation SiGe technology fabricated by IBM on 200-mm wafers. At room temperature, the circuits operated at approximately 350 GHz.
"For the first time, Georgia Tech and IBM have demonstrated that speeds of half a trillion cycles per second can be achieved in a commercial silicon-based technology, using large wafers and silicon-compatible low-cost manufacturing techniques," John Cressler, Byers Professor in Georgia Tech's School of Electrical and Computer Engineering, and a researcher in the Georgia Electronic Design Center at Georgia Tech, said in a statement.
"This groundbreaking collaborative research by Georgia Tech and IBM redefines the performance limits of silicon-based semiconductors," Bernie Meyerson, vice president and chief technologist at IBM Systems and Technology Group, said in the same statement.
In addition to Cressler, the team included Georgia Tech PhD students Ramkumar Krithivasan and Yuan Lu; Jae-Sun Rieh of Korea University in Seoul (formerly with IBM); and Marwan Khater, David Ahlgren and Greg Freeman of IBM Microelectronics (East Fishkill, N.Y.) The accomplishment will be reported in the July issue of the journal IEEE Electron Device Letters.
SAN JOSE, Calif. — IBM Corp. and the Georgia Institute of Technology Tuesday (June 20) claimed they have broken the silicon speed record, thanks in part to a "frozen chip."
IBM (Armonk, N.Y.) and Georgia Tech (Atlanta) claimed that they have demonstrated the first silicon-based chip capable of operating at frequencies above 500 GHz by cryogenically "freezing" the circuit to minus 451 degrees Fahrenheit (4.5 Kelvins).
By comparison, 500 GHz is more than 250 times faster than today's cell phones, which typically operate at approximately 2 GHz, according to the organizations.
The experiments, conducted jointly by IBM and Georgia Tech, are part of a project to explore the ultimate speed limits of silicon germanium (SiGe) devices, which are said to operate faster at cold temperatures.
Ultrahigh-frequency SiGe circuits have potential applications in commercial communications systems, military electronics, space and remote sensing. The research could make possible a new class of powerful, low-energy chips that will deliver future applications like HDTV and movie-quality video to cellphones, automobiles and other devices.
The chips used in the research are from a prototype fourth-generation SiGe technology fabricated by IBM on 200-mm wafers. At room temperature, the circuits operated at approximately 350 GHz.
"For the first time, Georgia Tech and IBM have demonstrated that speeds of half a trillion cycles per second can be achieved in a commercial silicon-based technology, using large wafers and silicon-compatible low-cost manufacturing techniques," John Cressler, Byers Professor in Georgia Tech's School of Electrical and Computer Engineering, and a researcher in the Georgia Electronic Design Center at Georgia Tech, said in a statement.
"This groundbreaking collaborative research by Georgia Tech and IBM redefines the performance limits of silicon-based semiconductors," Bernie Meyerson, vice president and chief technologist at IBM Systems and Technology Group, said in the same statement.
In addition to Cressler, the team included Georgia Tech PhD students Ramkumar Krithivasan and Yuan Lu; Jae-Sun Rieh of Korea University in Seoul (formerly with IBM); and Marwan Khater, David Ahlgren and Greg Freeman of IBM Microelectronics (East Fishkill, N.Y.) The accomplishment will be reported in the July issue of the journal IEEE Electron Device Letters.
guess2098
超級過氣會員..
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真報歉 google太機車 沒有繁體翻譯
大家就看看簡體的吧
SanJose,Calif-IBM公司和乔治亚理工学院周二(六月二十日)说他们打破纪录的速度硅,部分由于一种"冷冻芯片" IBM(Liberalization,N)和格鲁吉亚Tech(亚特兰大)称,他们首次证明硅为基础的芯片能够运行在500千兆赫以上的频率cryogenically的"冻结",以减电路华氏451度(450kelvins). 相比之下,500千兆赫以上的250倍,是高于今天的手机,一般约为2吉赫操作,根据该组织. 实验、格鲁吉亚和IBM共同进行技术、项目是探讨最终的车速矽Germanium(SiGe)装置,据说在寒冷的气温快速操作. 超高频率SiGe电路具有潜在的商业应用通信系统、军用电子、航天和遥感. 研究可以使新一类的强大,低耗能晶片,提供未来的应用,例如高清晰度电视、电影录像,手机质量、汽车和其他设备. 研究用芯片是一个典型的第四代SiGe制造技术,IBM在200毫米晶圆. 在室温下,运营线路约350千兆赫. "首次格鲁吉亚科技和IBM都表明速50万亿周期每秒可达到商业硅为基础的技术,使用大晶圆和硅兼容低成本的制造技术,"约翰Cressler,Vice教授格鲁吉亚Tech的校电子及电脑工程、研究员乔治亚电子设计中心在格鲁吉亚Tech一份声明中称. "这一开创性的合作研究和技术格鲁吉亚IBM业绩确定范围硅为基础的半导体"艾柏斯Meyerson副院长、首席技师在IBM系统和技术组在同一声明. 除了Cressler,包括格鲁吉亚队RamkumarKrithivasan科技大学博士班学生,LuYuan; Jae-孙Rieh韩国汉城大学(原与IBM); 马和KhaterDavidFreemanAhlgren和讯IBM微电子(东部Fishkill,N)的成绩将在七月份报导的杂志IEEE电子装置信件.
大家就看看簡體的吧
SanJose,Calif-IBM公司和乔治亚理工学院周二(六月二十日)说他们打破纪录的速度硅,部分由于一种"冷冻芯片" IBM(Liberalization,N)和格鲁吉亚Tech(亚特兰大)称,他们首次证明硅为基础的芯片能够运行在500千兆赫以上的频率cryogenically的"冻结",以减电路华氏451度(450kelvins). 相比之下,500千兆赫以上的250倍,是高于今天的手机,一般约为2吉赫操作,根据该组织. 实验、格鲁吉亚和IBM共同进行技术、项目是探讨最终的车速矽Germanium(SiGe)装置,据说在寒冷的气温快速操作. 超高频率SiGe电路具有潜在的商业应用通信系统、军用电子、航天和遥感. 研究可以使新一类的强大,低耗能晶片,提供未来的应用,例如高清晰度电视、电影录像,手机质量、汽车和其他设备. 研究用芯片是一个典型的第四代SiGe制造技术,IBM在200毫米晶圆. 在室温下,运营线路约350千兆赫. "首次格鲁吉亚科技和IBM都表明速50万亿周期每秒可达到商业硅为基础的技术,使用大晶圆和硅兼容低成本的制造技术,"约翰Cressler,Vice教授格鲁吉亚Tech的校电子及电脑工程、研究员乔治亚电子设计中心在格鲁吉亚Tech一份声明中称. "这一开创性的合作研究和技术格鲁吉亚IBM业绩确定范围硅为基础的半导体"艾柏斯Meyerson副院长、首席技师在IBM系统和技术组在同一声明. 除了Cressler,包括格鲁吉亚队RamkumarKrithivasan科技大学博士班学生,LuYuan; Jae-孙Rieh韩国汉城大学(原与IBM); 马和KhaterDavidFreemanAhlgren和讯IBM微电子(东部Fishkill,N)的成绩将在七月份报导的杂志IEEE电子装置信件.
熱心助人的小弟弟
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