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- 11/12/06
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請問gtl調教得好效果會顯著在哪個地方...我在想是不是L1 Cache、L2 Cache 的Read、Write、Copy 會比較高,Latency 會比較緊
然後...我現在跑ORTHOS+SP2004x2=四核心跑滿
Super PI、IntelBurnTest 都不會錯誤...可是就是用一段時間會死當(全部定格、滑鼠不能動、只能power按住三秒關機那種)
這問題是不是V(tt)跟V(nb)該調教 然後要用哪種軟體測才知道穩不穩...
P5Q-DX(BIOS:1406) + Q9550(E0) + 創建DDR2-800 1GBx2
CPU Ratio Setting: 8.5
FSB Frequency: 450
PCIE Frequency: 100
FSB Strap To North Bridge: AUTO
DRAM Frequency: 1200 <--這是穩的MemTest測過了
DRAM CLK Skew on Channel A1: Auto
DRAM CLK Skew on Channel A2: Auto
DRAM CLK Skew on Channel B1: Auto
DRAM CLK Skew on Channel B2: Auto
DRAM Timing Control: Manual !!!!
CAS Latency: 5
DRAM RAS to CAS Delay: 5
DRAM RAS Precharge: 5
DRAM RAS Activate to Precharge: 15
RAS TO RAS Delay: 3
Row Refresh Cycle Time: Auto
Write Recovery Time: Auto
Read To Precharge Time: Auto
Read to Write Delay: Auto
Write to Read (s): Auto
Write to Read (d): Auto
Read to Read (s): Auto
Read to Read (d): Auto
Write to Write(s): Auto
Write to Write(d): Auto
Write to Pre Delay: Auto
Read to Pre Delay: Auto
Pre to Pre Delay: Auto
All Pre to Act Delay: Auto
All Pre to REF Delay: Auto
DRAM Static Read Control: Disabled
DRAM Dynamic Write Control: Disabled
DRAM Read Training: Disabled
DRAM Write Training: Disabled
MEM OC Charger: Enabled
Ai Clock Twister: auto
AI Transaction Booster: Manual
Performance Level : 07
Pull-In of CHA.......Enabled
Pull-In of CHB.......Enabled
CPU Voltage: 1.31250
CPU GTL Voltage Reference (0/2): 0.645x
CPU GTL Voltage Reference (1/3): 0.675x
CPU PLL Voltage: 1.54
FSB Termination Voltage: 1.30 <-高的話會很快死當 我想大概跟GTL有關係
DRAM Voltage: 2.26
NB Voltage: Auto
NB GTL Voltage: Auto
SB Voltage: 1.10
PCIE SATA Voltage: 1.50
---------------------------
Load-Line Calibration: Enabled
CPU Spread Spectrum: Disabled
PCIE Spread Spectrum: Disabled
CPU Clock Skew: AUTO
NB Clock Skew: AUTO
然後...我現在跑ORTHOS+SP2004x2=四核心跑滿
Super PI、IntelBurnTest 都不會錯誤...可是就是用一段時間會死當(全部定格、滑鼠不能動、只能power按住三秒關機那種)
這問題是不是V(tt)跟V(nb)該調教 然後要用哪種軟體測才知道穩不穩...
P5Q-DX(BIOS:1406) + Q9550(E0) + 創建DDR2-800 1GBx2
CPU Ratio Setting: 8.5
FSB Frequency: 450
PCIE Frequency: 100
FSB Strap To North Bridge: AUTO
DRAM Frequency: 1200 <--這是穩的MemTest測過了
DRAM CLK Skew on Channel A1: Auto
DRAM CLK Skew on Channel A2: Auto
DRAM CLK Skew on Channel B1: Auto
DRAM CLK Skew on Channel B2: Auto
DRAM Timing Control: Manual !!!!
CAS Latency: 5
DRAM RAS to CAS Delay: 5
DRAM RAS Precharge: 5
DRAM RAS Activate to Precharge: 15
RAS TO RAS Delay: 3
Row Refresh Cycle Time: Auto
Write Recovery Time: Auto
Read To Precharge Time: Auto
Read to Write Delay: Auto
Write to Read (s): Auto
Write to Read (d): Auto
Read to Read (s): Auto
Read to Read (d): Auto
Write to Write(s): Auto
Write to Write(d): Auto
Write to Pre Delay: Auto
Read to Pre Delay: Auto
Pre to Pre Delay: Auto
All Pre to Act Delay: Auto
All Pre to REF Delay: Auto
DRAM Static Read Control: Disabled
DRAM Dynamic Write Control: Disabled
DRAM Read Training: Disabled
DRAM Write Training: Disabled
MEM OC Charger: Enabled
Ai Clock Twister: auto
AI Transaction Booster: Manual
Performance Level : 07
Pull-In of CHA.......Enabled
Pull-In of CHB.......Enabled
CPU Voltage: 1.31250
CPU GTL Voltage Reference (0/2): 0.645x
CPU GTL Voltage Reference (1/3): 0.675x
CPU PLL Voltage: 1.54
FSB Termination Voltage: 1.30 <-高的話會很快死當 我想大概跟GTL有關係
DRAM Voltage: 2.26
NB Voltage: Auto
NB GTL Voltage: Auto
SB Voltage: 1.10
PCIE SATA Voltage: 1.50
---------------------------
Load-Line Calibration: Enabled
CPU Spread Spectrum: Disabled
PCIE Spread Spectrum: Disabled
CPU Clock Skew: AUTO
NB Clock Skew: AUTO
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